highkmetalgateprocessflow

由 L Wu 著作 · 2013 — One step from typical CMOS process flow is the source/drain (S/D) activation annealing, which the gate stack must undergo. The typical S/D ...

由 J Robertson 著作 · 2015 · 被引用 734 次 — ... gate last' process flow, in addition to the standard 'gate first' approach. Work function control by metal gate electrodes and by oxide dipole layers is ...

由 J Robertson 著作 · 被引用 734 次 — The gate first process (Fig 10a) follows the same process flow as with a SiO2 gate oxide [62]. In gate first, we sequentially deposit a gate oxide layer, gate ...

由 T Duan 著作 · 2015 — Figure 4.1 (a) Process flow for the fabrication XPS samples as well as capacitors and (b) schematic diagrams of the gate stacks for XPS samples ...

The merging and dissolution of an oxygen vacancy with a filament (equivalent to perpendicular migration) is found to have a similar behavior that +2 states ...

由 E Erben 著作 · 2018 · 被引用 8 次 — ... high-k gate dielectric into the very complex CMOS process flows. Gate first and gate last technologies use different mechanisms to set the work functions ...